{"id":16385,"date":"2026-03-18T09:25:35","date_gmt":"2026-03-18T09:25:35","guid":{"rendered":"http:\/\/quartz-grinding.com\/?p=16385"},"modified":"2026-03-18T09:25:38","modified_gmt":"2026-03-18T09:25:38","slug":"electronic-grade-fused-silica-powder-the-complete-production-process-from-melting-to-final-classification","status":"publish","type":"post","link":"https:\/\/www.quartz-grinding.com\/tr\/electronic-grade-fused-silica-powder-the-complete-production-process-from-melting-to-final-classification\/","title":{"rendered":"Elektronik S\u0131n\u0131f\u0131 Erimi\u015f Silika Tozu: Erimeden Son S\u0131n\u0131fland\u0131rmaya Kadar T\u00fcm \u00dcretim S\u00fcreci"},"content":{"rendered":"

$5\/kg end\u00fcstriyel silika dolgu maddesi ile $50\/kg elektronik s\u0131n\u0131f\u0131 erimi\u015f silika dolgu maddesi aras\u0131ndaki fark, ham maddede de\u011fil, \u00fcretim s\u00fcrecindedir. Her ikisi de y\u00fcksek safl\u0131kta kuvars ile ba\u015flar. Onlar\u0131 ay\u0131ran \u015fey, ocaktan nihai \u00fcr\u00fcn torbas\u0131na kadar olan her ad\u0131m\u0131n hassasiyetidir. Bunlar, eritme ko\u015fullar\u0131, \u00f6\u011f\u00fctme teknolojisi, s\u0131n\u0131fland\u0131rma hassasiyeti ve her a\u015famada uygulanan kirlilik kontrolleridir.<\/p>\n\n\n\n

Elektronik s\u0131n\u0131f\u0131 erimi\u015f silika, yar\u0131 iletken epoksi kal\u0131plama bile\u015fiklerinde ve PCB laminatlar\u0131nda birincil dolgu maddesidir. Tek bir b\u00fcy\u00fck par\u00e7ac\u0131k, kal\u0131plama s\u0131ras\u0131nda tel kaymas\u0131na veya 28 GHz'de sinyal kayb\u0131na neden olabilir. \u00dcretim s\u00fcreci, her iki kusuru da tutarl\u0131 bir \u015fekilde, parti parti \u00f6nlemelidir. Bu makale, yedi a\u015famal\u0131 \u00fcretim zincirini ele almaktad\u0131r: hammadde se\u00e7imi, eritme, \u00f6\u011f\u00fctme, s\u0131n\u0131fland\u0131rma, y\u00fczey i\u015fleme ve kirlilik kontrol\u00fc. Her a\u015faman\u0131n, nihai \u00fcr\u00fcn\u00fcn yar\u0131 iletken paketleme m\u00fchendisleri taraf\u0131ndan istenen \u00f6zelliklere uygun olup olmad\u0131\u011f\u0131n\u0131 belirleyen belirli kalite parametreleri vard\u0131r.<\/p>\n\n\n\n

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Erimi\u015f Silika Tozu<\/figcaption><\/figure>\n\n\n\n

Erimi\u015f Silikay\u0131 'Elektronik S\u0131n\u0131f\u0131' Yapan Nedir \u2014 Spesifikasyon E\u015fi\u011fi<\/h2>\n\n\n\n

Erimi\u015f silika, y\u00fcksek safl\u0131kta kristal kuvars\u0131n 1720\u00b0C'nin \u00fczerinde eritilmesiyle \u00fcretilen amorf silikon dioksittir. Erime, kristal kuvars\u0131 d\u00fczensiz bir cams\u0131 a\u011fa d\u00f6n\u00fc\u015ft\u00fcrerek amorf erimi\u015f silika olu\u015fturur. Bu amorf yap\u0131, erimi\u015f silikaya son derece d\u00fc\u015f\u00fck bir CTE (epoksi re\u00e7ine i\u00e7in 12-17 ppm\/\u00b0C'ye kar\u015f\u0131l\u0131k 0,5 ppm\/\u00b0C) kazand\u0131r\u0131r. D\u00fc\u015f\u00fck CTE, silikonun genle\u015fme oran\u0131na uyum sa\u011flayarak yar\u0131 iletken paketleme i\u00e7in de\u011ferli hale getirir. Lehimleme ve termal d\u00f6ng\u00fc s\u0131ras\u0131nda termomekanik stresi azalt\u0131r. Ancak 'erimi\u015f silika' geni\u015f bir \u00fcr\u00fcn yelpazesini kapsar. Kimyasal safl\u0131k, par\u00e7ac\u0131k boyutu \u00f6zellikleri ve amorf i\u00e7eri\u011fin birle\u015fimi, elektronik s\u0131n\u0131f\u0131 tan\u0131mlar; \u00e7o\u011fu end\u00fcstriyel erimi\u015f silika bu gereksinimleri kar\u015f\u0131lamaz.<\/p>\n\n\n\n

\u015eartname<\/strong><\/td>Standart EMC S\u0131n\u0131f\u0131<\/strong><\/td>\u0130nce E\u011fimli \/ BGA S\u0131n\u0131f\u0131<\/strong><\/td>Ultra \u0130nce \/ WLP S\u0131n\u0131f\u0131<\/strong><\/td><\/tr>
D50 (ortalama boyut)<\/td>5\u201310 \u03bcm<\/td>3\u20136 \u03bcm<\/td>1\u20133 \u03bcm<\/td><\/tr>
D97 \/ D98 maksimum<\/td><25 \u03bcm<\/td><15 \u03bcm<\/td><8 \u03bcm<\/td><\/tr>
Dmax (mutlak maksimum)<\/td><45 \u03bcm<\/td><25 \u03bcm<\/td><12 \u03bcm<\/td><\/tr>
SiO2 safl\u0131\u011f\u0131 (minimum)<\/td>99.9%<\/td>99.95%<\/td>99.97%<\/td><\/tr>
Amorf i\u00e7erik<\/td>\u226599%<\/td>\u226599.5%<\/td>\u226599.9%<\/td><\/tr>
Fe2O3 maksimum<\/td><30 ppm<\/td><10 ppm<\/td><5 ppm<\/td><\/tr>
U + Th (radyoaktivite)<\/td><1 ppb her biri<\/td><0,5 ppb her biri<\/td><0,2 ppb her biri<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

\u00d6zellikler m\u00fc\u015fteriye ve uygulamaya g\u00f6re de\u011fi\u015fiklik g\u00f6sterir. Yukar\u0131da belirtilenler tipik end\u00fcstri aral\u0131klar\u0131n\u0131 temsil etmektedir. \u00dcretimden \u00f6nce h\u00fccre \u00fcreticinizin veya paketleme firman\u0131z\u0131n spesifikasyonlar\u0131yla kar\u015f\u0131la\u015ft\u0131rarak do\u011frulay\u0131n.<\/em><\/p>\n\n\n\n

Bu tabloda yer alan iki \u00f6zellik a\u00e7\u0131klama gerektiriyor. U ve Th radyoaktivite limitleri, DRAM ve mant\u0131k devrelerinde alfa par\u00e7ac\u0131klar\u0131n\u0131n neden oldu\u011fu yumu\u015fak hatalar\u0131 \u00f6nler. Bu tek olayl\u0131k aksakl\u0131klar, sahada g\u00f6r\u00fcnmez g\u00fcvenilirlik ar\u0131zalar\u0131na neden olur. Kayna\u015ft\u0131r\u0131lm\u0131\u015f silika dolgu maddesinin radyoaktivite taramas\u0131 art\u0131k bellek paketlemesinde standartt\u0131r. Sa\u011fl\u0131k ve performans nedenleriyle amorf i\u00e7eri\u011fin \u226599% olmas\u0131 gerekmektedir. Kalan kristal kuvars, solundu\u011funda kanserojendir. Dielektrik \u00f6zellikleri de amorf SiO\u2082'den farkl\u0131d\u0131r ve y\u00fcksek frekansl\u0131 sinyal b\u00fct\u00fcnl\u00fc\u011f\u00fcn\u00fc etkiler.<\/p>\n\n\n\n

A\u015fama 1 \u2014 Hammadde Se\u00e7imi<\/h2>\n\n\n\n

Son \u00fcr\u00fcn\u00fcn kalite s\u0131n\u0131r\u0131 burada belirlenir. Sonraki hi\u00e7bir i\u015fleme ad\u0131m\u0131, safl\u0131\u011f\u0131 ham maddenin sa\u011flad\u0131\u011f\u0131 seviyenin \u00fczerine \u00e7\u0131karamaz; yaln\u0131zca koruyabilir veya bozabilir. Elektronik s\u0131n\u0131f\u0131 kayna\u015fm\u0131\u015f silika \u00fcreticilerinin \u00e7o\u011fu, y\u00fcksek safl\u0131kta damarl\u0131 kuvars ile \u00e7al\u0131\u015f\u0131r: SiO\u2082 tipik olarak ,5\u201399,9% safl\u0131ktad\u0131r ve kristal yap\u0131s\u0131n\u0131n, safs\u0131zl\u0131k mineral kal\u0131nt\u0131lar\u0131n\u0131n fiziksel olarak ayr\u0131lmas\u0131na izin verecek kadar b\u00fcy\u00fck oldu\u011fu yataklardan elde edilir.<\/p>\n\n\n\n

Do\u011fal Kuvars ve Sentetik \u00d6n Maddeler<\/h3>\n\n\n\n

Do\u011fal damarl\u0131 kuvars, de\u011fi\u015fkenli\u011fine ra\u011fmen EMC s\u0131n\u0131f\u0131 erimi\u015f silika i\u00e7in birincil ticari hammadde olmaya devam etmektedir. Sentetik SiO\u2082 \u00f6nc\u00fclleri daha y\u00fcksek safl\u0131k sunar ancak do\u011fal kuvarsdan 5-10 kat daha pahal\u0131d\u0131r. 70-85% dolgu y\u00fcklemesinde, sentetik hammadde hacimli yar\u0131 iletken paketleme i\u00e7in ekonomik olmaktan \u00e7\u0131kar. Kritik hammadde parametreleri aras\u0131nda SiO\u2082 analizi, eser metal profili ve nem i\u00e7eri\u011fi bulunur. Beslemedeki safs\u0131zl\u0131k da\u011f\u0131l\u0131m\u0131 XRF ve ICP-MS analizi ile do\u011frulan\u0131r. S\u0131v\u0131 kapan\u0131mlar\u0131 veya mineral damarlar\u0131, kuvars yataklar\u0131nda alkali metalleri ve demiri yo\u011funla\u015ft\u0131r\u0131r. Bu kirleticiler eriyikte ortaya \u00e7\u0131kar ve daha sonra uzakla\u015ft\u0131r\u0131lamaz.<\/p>\n\n\n\n

Radyoaktivite Taramas\u0131<\/h3>\n\n\n\n

D\u00fc\u015f\u00fck arka planl\u0131 alfa par\u00e7ac\u0131\u011f\u0131 say\u0131m\u0131, uranyum ve toryum bozunma zincirlerinden kaynaklanan alfa emisyonunu tarar ve tipik olarak birim alan ba\u015f\u0131na saatte say\u0131m \u00f6l\u00e7\u00fcm\u00fc yapar. Bu test h\u0131zl\u0131 de\u011fildir; d\u00fc\u015f\u00fck seviyeli tarama i\u00e7in 24 saatlik bir say\u0131m s\u00fcresi standartt\u0131r. Geli\u015fmi\u015f mant\u0131k ve DRAM paketleme hizmeti veren tedarik zincirleri, radyoaktivite taramas\u0131 tamamlanana kadar hammadde partilerini karantinaya al\u0131r.<\/p>\n\n\n\n

Kimyasal kalite kontrol\u00fcnden ge\u00e7en ancak radyoaktivite taramas\u0131nda ba\u015far\u0131s\u0131z olan y\u00fcksek U i\u00e7eri\u011fine sahip tek bir parti, tespit edilmeden \u00f6nce erimeye ba\u015flarsa tedarik zincirini \u00f6nemli \u00f6l\u00e7\u00fcde aksat\u0131r.<\/p>\n\n\n\n

A\u015fama 2 \u2014 Erime ve Vitrifikasyon<\/h2>\n\n\n\n

Kristal kuvars\u0131 amorf erimi\u015f silikaya d\u00f6n\u00fc\u015ft\u00fcrmek, 1720\u00b0C'nin \u00fczerinde s\u00fcrekli s\u0131cakl\u0131klar gerektirir; bu da kuvars\u0131n yakla\u015f\u0131k 1650\u00b0C olan erime noktas\u0131n\u0131n olduk\u00e7a \u00fczerindedir. Aradaki fark \u00f6nemlidir: Sadece 1650\u00b0C'ye kadar \u0131s\u0131t\u0131lan malzeme k\u0131smi faz d\u00f6n\u00fc\u015f\u00fcm\u00fcne u\u011frar ve son \u00fcr\u00fcn\u00fcn XRD analizinde ortaya \u00e7\u0131kacak art\u0131k kristal i\u00e7eri\u011fini korur.<\/p>\n\n\n\n

Elektrik Ark F\u00fczyonu vs. Hidrojen-Oksijen Alev F\u00fczyonu<\/h3>\n\n\n\n

Ticari olarak kullan\u0131lan iki end\u00fcstriyel eritme y\u00f6ntemi vard\u0131r ve bunlar farkl\u0131 \u00fcr\u00fcnler \u00fcretir.<\/p>\n\n\n\n

Elektrik ark f\u00fczyonu, gerekli s\u0131cakl\u0131klar\u0131 \u00fcretmek i\u00e7in grafit veya tungsten elektrotlar kullan\u0131r. B\u00fcy\u00fck \u00fcretim hacimlerini (parti ba\u015f\u0131na tonlarca) kar\u015f\u0131lar ve standart s\u0131n\u0131f ve \u00e7o\u011fu end\u00fcstriyel s\u0131n\u0131f erimi\u015f silika i\u00e7in bask\u0131n teknolojidir. Kirlenme riski elektrot a\u015f\u0131nmas\u0131ndan kaynaklan\u0131r: grafit elektrotlar eriyik i\u00e7erisine karbon katar; metal elektrotlar ise eser miktarda metal katar. Her ikisi de proses kontrol\u00fc ile y\u00f6netilebilir, ancak elde edilebilecek safl\u0131kta bir \u00fcst s\u0131n\u0131r olu\u015fturarak elektrik ark f\u00fczyonunu en y\u00fcksek kalitedeki elektronik uygulamalar i\u00e7in daha az uygun hale getirir.<\/p>\n\n\n\n

Hidrojen-oksijen alev f\u00fczyonu, temiz ve y\u00fcksek s\u0131cakl\u0131kta bir alev (reaksiyon b\u00f6lgesinde 2000\u00b0C'nin \u00fczerinde) olu\u015fturmak i\u00e7in H\u2082 ve O\u2082'yi yakar. Elektrot yoktur, eriyikle temas eden metal par\u00e7a yoktur ve tek i\u015flem gazlar\u0131 hidrojen ve oksijendir. Bu y\u00f6ntem, daha d\u00fc\u015f\u00fck verimle ve kilogram ba\u015f\u0131na daha y\u00fcksek maliyetle daha y\u00fcksek safl\u0131kta erimi\u015f silika \u00fcretir. Ark f\u00fczyonunun elektrot kirlili\u011finin safs\u0131zl\u0131k spesifikasyonunu a\u015faca\u011f\u0131 ultra ince ve ultra y\u00fcksek safl\u0131k dereceleri i\u00e7in tercih edilen y\u00f6ntemdir.<\/p>\n\n\n\n

Alevle eritme y\u00f6ntemine \u00f6zg\u00fc bir dezavantaj: Hidrojenin yanmas\u0131 su buhar\u0131 \u00fcretir ve bu da cam a\u011f\u0131na hidroksil (-OH) gruplar\u0131 katabilir. Kalan -OH gruplar\u0131, mikrodalga frekanslar\u0131nda dielektrik kay\u0131p tanjant\u0131n\u0131 art\u0131r\u0131r; bu da 5G bantlar\u0131ndaki PCB laminat uygulamalar\u0131 i\u00e7in bir endi\u015fe kayna\u011f\u0131d\u0131r. Proses atmosferindeki nemin kontrol edilmesi (H\u2082\/O\u2082 oran\u0131n\u0131n ve f\u0131r\u0131n atmosferinin kontrol edilmesi), -OH gruplar\u0131n\u0131n elektriksel performans\u0131 etkileyen e\u015fik de\u011ferin alt\u0131nda kalmas\u0131n\u0131 sa\u011flar.<\/p>\n\n\n\n

Erime Sonras\u0131 Kalite Kap\u0131s\u0131<\/h3>\n\n\n\n

\u2022XRD analizi: Amorf i\u00e7eri\u011fin miktar\u0131n\u0131 belirlemek i\u00e7in kullan\u0131l\u0131r \u2014 Rietveld iyile\u015ftirmesi, elektronik s\u0131n\u0131f\u0131 malzeme i\u00e7in <0,5% kristal fazlar\u0131n\u0131 g\u00f6stermelidir.
\u2022ICP-MS yeniden analizi: Eritme s\u0131ras\u0131nda herhangi bir kirlenmenin olu\u015fmad\u0131\u011f\u0131n\u0131 do\u011frulamak i\u00e7in \u2014 eritme \u00f6ncesi ve sonras\u0131 iz metal profillerini kar\u015f\u0131la\u015ft\u0131r\u0131n.
\u2022G\u00f6rsel inceleme: K\u0131rma i\u015fleminden \u00f6nce k\u00fcl\u00e7e veya topak i\u00e7inde erimeyen b\u00f6lgeleri, kal\u0131nt\u0131lar\u0131 ve b\u00fcy\u00fck kabarc\u0131klar\u0131 kontrol edin.<\/p>\n\n\n\n

3. A\u015fama \u2014 Birincil Boyut K\u00fc\u00e7\u00fcltme: K\u0131rma ve \u00d6n \u00d6\u011f\u00fctme<\/h2>\n\n\n\n

Erimi\u015f silika, eritme a\u015famas\u0131ndan k\u00fcl\u00e7e, top veya levha \u015feklinde \u00e7\u0131kar; bu hammadde, ince \u00f6\u011f\u00fctmeden \u00f6nce i\u015flenebilir bir boyuta indirgenmelidir. Bu a\u015fama, eritme a\u015famas\u0131nda elde edilen her \u015feyi baltalayacak metalik kirlenmeyi \u00f6nleyerek verimli boyut k\u00fc\u00e7\u00fcltme ile ilgilidir.<\/p>\n\n\n\n

\u00c7eneli k\u0131rma i\u015flemi, k\u00fcl\u00e7eleri 50-200 mm'den <10 mm'ye kadar k\u00fc\u00e7\u00fclt\u00fcr. Kirlenme riski, \u00e7ene plakas\u0131 a\u015f\u0131nmas\u0131ndan kaynaklan\u0131r: standart manganez \u00e7elik \u00e7ene plakalar\u0131, elektronik s\u0131n\u0131f\u0131 malzeme i\u00e7in kabul edilemez seviyelerde demir a\u00e7\u0131\u011fa \u00e7\u0131kar\u0131r. \u00dcreticiler, elektronik s\u0131n\u0131f\u0131 erimi\u015f silikan\u0131n birincil k\u0131rma i\u015flemi i\u00e7in y\u00fcksek al\u00fcmina seramik \u00e7ene u\u00e7lar\u0131 veya tungsten karb\u00fcr kompozit \u00e7ene plakalar\u0131 kullan\u0131r. Her ikisi de maliyeti art\u0131r\u0131r, ancak k\u00fctle ak\u0131\u015f h\u0131z\u0131n\u0131n kirlenme d\u00fczeltmesini pratik olmaktan \u00e7\u0131karacak kadar y\u00fcksek oldu\u011fu bir a\u015famada demir giri\u015fini \u00f6nler.<\/p>\n\n\n\n

100-200 mesh (75-150 \u03bcm) boyutuna \u00f6n \u00f6\u011f\u00fctme, safs\u0131zl\u0131k spesifikasyonuna ba\u011fl\u0131 olarak al\u00fcmina veya zirkonya seramik kaplamal\u0131 bir silindirli de\u011firmen veya bilyal\u0131 de\u011firmen kullan\u0131larak yap\u0131l\u0131r. Bu a\u015famada hedef, ince \u00f6\u011f\u00fctme ad\u0131m\u0131 i\u00e7in tutarl\u0131 bir besleme par\u00e7ac\u0131k boyutu da\u011f\u0131l\u0131m\u0131d\u0131r: 100%'nin 150 \u03bcm'den ge\u00e7mesi ve D50'nin tipik olarak 30-60 \u03bcm aral\u0131\u011f\u0131nda olmas\u0131. Bu a\u015famada a\u015f\u0131r\u0131 \u00f6\u011f\u00fctme, fayda sa\u011flamadan enerji israf\u0131na yol a\u00e7ar; yetersiz \u00f6\u011f\u00fctme ise ince \u00f6\u011f\u00fctme ad\u0131m\u0131 i\u00e7in tutars\u0131z ve daha kaba bir besleme olu\u015fturarak s\u0131n\u0131fland\u0131r\u0131c\u0131 devresinin \u00e7al\u0131\u015fma noktas\u0131n\u0131 de\u011fi\u015ftirir.<\/p>\n\n\n\n

A\u015fama 4 \u2014 Hedef Par\u00e7ac\u0131k Boyutuna Kadar \u0130nce \u00d6\u011f\u00fctme<\/h2>\n\n\n\n

Uygulaman\u0131n D50 spesifikasyonu (1 \u03bcm ile 15 \u03bcm aras\u0131nda de\u011fi\u015fen) art\u0131k operat\u00f6rlerin \u00f6nceden \u00f6\u011f\u00fct\u00fclm\u00fc\u015f erimi\u015f silika beslemesini ne kadar ince \u00f6\u011f\u00fctmesi gerekti\u011fini belirliyor. Bu indirgeme ad\u0131m\u0131 i\u00e7in iki teknoloji mevcut. Teknoloji se\u00e7imini esas olarak hedef incelik ve kirlilik b\u00fct\u00e7esi belirliyor.<\/p>\n\n\n\n

Hava S\u0131n\u0131fland\u0131r\u0131c\u0131l\u0131 Bilyal\u0131 De\u011firmen (Standart ve Orta Kalite)<\/h3>\n\n\n\n

D50 5-15 \u03bcm ve D97 25-45 \u03bcm'nin alt\u0131nda olan standart EMC kaliteleri i\u00e7in, dinamik hava s\u0131n\u0131fland\u0131r\u0131c\u0131l\u0131 kapal\u0131 devre seramik kapl\u0131 bilyal\u0131 de\u011firmen en enerji verimli se\u00e7enektir. De\u011firmen partik\u00fcl boyutunu k\u00fc\u00e7\u00fclt\u00fcr; s\u0131n\u0131fland\u0131r\u0131c\u0131 \u00e7\u0131kt\u0131y\u0131 ay\u0131r\u0131r, a\u015f\u0131r\u0131 b\u00fcy\u00fck partik\u00fclleri de\u011firmene geri g\u00f6nderir ve spesifikasyona uygun partik\u00fclleri \u00fcr\u00fcn toplama sistemine g\u00f6nderir. Bu kapal\u0131 devre tasar\u0131m\u0131 a\u015f\u0131r\u0131 \u00f6\u011f\u00fctmeyi \u00f6nler: partik\u00fcller, gerekenden daha ince \u00f6\u011f\u00fct\u00fclmeye devam etmek yerine, boyut spesifikasyonuna ula\u015ft\u0131klar\u0131 anda devreden \u00e7\u0131karlar.<\/p>\n\n\n\n

Kontaminasyon y\u00f6netimi: Bilye ve astar malzemesi, \u00fcr\u00fcn\u00fcn safs\u0131zl\u0131k tolerans\u0131na uygun olmal\u0131d\u0131r. \u00c7o\u011fu standart EMC uygulamas\u0131 i\u00e7in, al\u00fcmina (Al\u2082O\u2083) bilyeler, al\u00fcmina astarl\u0131 bir de\u011firmende do\u011fru e\u015fle\u015fmedir; astar a\u015f\u0131nmas\u0131yla olu\u015fan Al kontaminasyonu, SiO\u2082 bazl\u0131 EMC form\u00fclasyonlar\u0131nda kabul edilebilir. Al kontaminasyonunun 50 ppm'nin alt\u0131nda bile olmas\u0131 gereken uygulamalar i\u00e7in, zirkonya bilyeler, zirkonya astarl\u0131 bir de\u011firmende Al yolunu ortadan kald\u0131r\u0131r, ancak ekipman maliyeti daha y\u00fcksektir.<\/p>\n\n\n\n

\u0130nce ve Ultra \u0130nce Taneler i\u00e7in Jet \u00d6\u011f\u00fctme<\/h3>\n\n\n\n

D50 de\u011ferinin 5 \u03bcm'nin alt\u0131nda ve Dmax de\u011ferinin 15 \u03bcm'nin alt\u0131nda olmas\u0131 gereken ince aral\u0131kl\u0131 ve WLP kaliteleri i\u00e7in, ak\u0131\u015fkan yatakl\u0131 jet \u00f6\u011f\u00fctme standart i\u015flemdir. En \u00f6nemli avantaj\u0131 \u00f6\u011f\u00fctme mekanizmas\u0131d\u0131r: Par\u00e7ac\u0131klar, s\u0131k\u0131\u015ft\u0131r\u0131lm\u0131\u015f gaz jetleri taraf\u0131ndan tahrik edilen y\u00fcksek h\u0131zda birbirleriyle \u00e7arp\u0131\u015farak k\u0131r\u0131l\u0131r. \u00dcr\u00fcnle temas eden \u00f6\u011f\u00fctme y\u00fczeyi yoktur; tek kat\u0131 y\u00fczeyler, her ikisi de seramik kapl\u0131 olabilen hazne duvarlar\u0131 ve s\u0131n\u0131fland\u0131r\u0131c\u0131 tekerlektir. \u00d6\u011f\u00fctme a\u015famas\u0131ndan kaynaklanan metal kirlili\u011fi s\u0131f\u0131ra yak\u0131nd\u0131r.<\/p>\n\n\n\n

S\u0131k\u0131\u015ft\u0131r\u0131lm\u0131\u015f gaz kuru ve ya\u011fs\u0131z olmal\u0131d\u0131r. \u0130nce par\u00e7ac\u0131k boyutlar\u0131nda \u00f6\u011f\u00fctme gaz\u0131ndaki nem, s\u0131n\u0131fland\u0131r\u0131c\u0131da par\u00e7ac\u0131k k\u00fcmelenmesine neden olur; bu da par\u00e7ac\u0131k boyutu da\u011f\u0131l\u0131m\u0131n\u0131 geni\u015fletir ve D97 de\u011ferini \u00f6ng\u00f6r\u00fclemeyen \u015fekilde y\u00fckseltir. Gaz giri\u015finde hat i\u00e7i \u00e7i\u011f noktas\u0131 monit\u00f6r\u00fc, ince taneli erimi\u015f silika \u00fcretimi i\u00e7in standart bir uygulamad\u0131r.<\/p>\n\n\n\n

Jet \u00f6\u011f\u00fctmenin enerji maliyeti, ayn\u0131 hedef D50 i\u00e7in bilyal\u0131 \u00f6\u011f\u00fctmeye g\u00f6re ton ba\u015f\u0131na 3-4 kat daha y\u00fcksektir. $40-80\/kg'l\u0131k ince taneli erimi\u015f silika i\u00e7in, enerji primi kolayca hakl\u0131 \u00e7\u0131kar\u0131labilir. Jet \u00f6\u011f\u00fctmenin, bilyal\u0131 \u00f6\u011f\u00fctme ve kapsaml\u0131 kirlilik kontrol\u00fcne k\u0131yasla daha ekonomik bir toplam maliyet se\u00e7ene\u011fi haline geldi\u011fi ge\u00e7i\u015f noktas\u0131, tipik olarak D50 4-5 \u03bcm civar\u0131ndad\u0131r.<\/p>\n\n\n\n

A\u00e7\u0131sal m\u0131 K\u00fcresel mi: Morfoloji Sorusu<\/h3>\n\n\n\n

Hem bilyal\u0131 \u00f6\u011f\u00fctme hem de jet \u00f6\u011f\u00fctme, a\u00e7\u0131l\u0131 par\u00e7ac\u0131klar \u00fcretir. K\u0131r\u0131lma mekani\u011fi bunu garanti eder; \u00f6\u011f\u00fctme, malzemeyi gerilim yo\u011funla\u015fma d\u00fczlemleri boyunca k\u0131rar ve kullan\u0131lan teknolojiden ba\u011f\u0131ms\u0131z olarak d\u00fczensiz par\u00e7alar \u00fcretir. A\u00e7\u0131l\u0131 kayna\u015fm\u0131\u015f silika, yakla\u015f\u0131k 80% a\u011f\u0131rl\u0131k\u00e7a y\u00fcklemeye kadar standart EMC i\u00e7in uygundur.<\/p>\n\n\n\n

En d\u00fc\u015f\u00fck CTE gerektiren geli\u015fmi\u015f paketler, 80%'nin \u00fczerinde y\u00fckleme gerektirir. A\u00e7\u0131sal par\u00e7ac\u0131klar, bu y\u00fckleme seviyelerinde bile\u015fikte a\u015f\u0131r\u0131 viskozite olu\u015fturarak transfer kal\u0131plama ak\u0131\u015f\u0131n\u0131 engeller. \u00dcreticiler, ince a\u00e7\u0131sal tozu hidrojen-oksijen alevinden ge\u00e7irerek (alevle k\u00fcreselle\u015ftirme) k\u00fcresel erimi\u015f silika \u00fcretirler. K\u00fcreselle\u015ftirme i\u015flemi, par\u00e7ac\u0131k kimyas\u0131n\u0131 veya amorf i\u00e7eri\u011fi de\u011fi\u015ftirmez; erimi\u015f haldeki y\u00fczey gerilimi etkileri yoluyla par\u00e7ac\u0131k \u015feklini d\u00f6n\u00fc\u015ft\u00fcr\u00fcr. Maliyet fark\u0131 \u00f6nemli \u00f6l\u00e7\u00fcdedir (tipik olarak ayn\u0131 PSD'ye sahip a\u00e7\u0131sal \u00fcr\u00fcne k\u0131yasla kilogram ba\u015f\u0131na 2-3 kat daha fazla) ve yaln\u0131zca y\u00fckleme hedefinin a\u00e7\u0131sal dolgu maddesiyle elde edilemedi\u011fi uygulamalar i\u00e7in hakl\u0131d\u0131r.<\/p>\n\n\n\n

A\u015fama 5 \u2014 Nihai Par\u00e7ac\u0131k Boyutu Belirtimine G\u00f6re S\u0131n\u0131fland\u0131rma<\/h3>\n\n\n\n

Bu a\u015fama, nihai PSD'yi belirleyen a\u015famad\u0131r ve elektronik s\u0131n\u0131f\u0131 uygulamalar i\u00e7in \u00fcretim zincirindeki en teknik a\u00e7\u0131dan zorlu ad\u0131md\u0131r. Ta\u015flama, yakla\u015f\u0131k D50 de\u011ferini belirler. S\u0131n\u0131fland\u0131rma, yar\u0131 iletken paketleme \u00f6zelliklerinin gerektirdi\u011fi hassasiyetle D97, Dmax ve span de\u011ferlerini tan\u0131mlar.<\/p>\n\n\n\n

S\u0131n\u0131fland\u0131rman\u0131n Neden Atlanamayaca\u011f\u0131<\/h3>\n\n\n\n

\u00d6\u011f\u00fctme i\u015flemi, geni\u015f ve s\u00fcrekli bir par\u00e7ac\u0131k boyutu da\u011f\u0131l\u0131m\u0131 \u00fcretir. Belirli bir enerji girdisiyle \u00e7al\u0131\u015fan bir bilyal\u0131 de\u011firmen veya jet de\u011firmeni, mikron alt\u0131 par\u00e7ac\u0131klardan D50'nin 5-10 kat\u0131 b\u00fcy\u00fckl\u00fc\u011f\u00fcndeki par\u00e7ac\u0131klara kadar de\u011fi\u015fen bir malzeme \u00fcretecektir. S\u0131n\u0131fland\u0131r\u0131lmam\u0131\u015f de\u011firmen \u00e7\u0131kt\u0131s\u0131n\u0131n D97 de\u011feri tipik olarak D50'nin 3-5 kat\u0131d\u0131r; yani 5 \u03bcm'lik bir D50 i\u00e7in, s\u0131n\u0131fland\u0131rma yap\u0131lmadan 30-50 \u03bcm'lik Dmax de\u011ferleri yayg\u0131nd\u0131r. 0,4 mm'lik bir tel ba\u011flama aral\u0131\u011f\u0131 i\u00e7in, 25 \u03bcm'nin \u00fczerindeki par\u00e7ac\u0131klar \u00f6l\u00fcmc\u00fcl par\u00e7ac\u0131klard\u0131r. S\u0131n\u0131fland\u0131rma iste\u011fe ba\u011fl\u0131 de\u011fildir.<\/p>\n\n\n\n

Tek Kademeli Hava S\u0131n\u0131fland\u0131rmas\u0131 (Standart Dereceler)<\/h3>\n\n\n\n

Dinamik bir hava s\u0131n\u0131fland\u0131r\u0131c\u0131, s\u0131n\u0131fland\u0131r\u0131c\u0131 \u00e7ark y\u00fczeyindeki merkezka\u00e7 kuvveti ve aerodinamik s\u00fcrt\u00fcnmenin dengesiyle par\u00e7ac\u0131klar\u0131 ay\u0131r\u0131r. \u00c7ark d\u00f6n\u00fc\u015f h\u0131z\u0131, kesme noktas\u0131n\u0131 kontrol eder: daha y\u00fcksek h\u0131z, daha b\u00fcy\u00fck par\u00e7ac\u0131klar\u0131 de\u011firmene geri g\u00f6nderirken, daha ince par\u00e7ac\u0131klar \u00fcr\u00fcne ge\u00e7er. D97'nin 25 \u03bcm'nin alt\u0131nda olmas\u0131 gereken standart EMC kaliteleri i\u00e7in, tek kademeli bir s\u0131n\u0131fland\u0131r\u0131c\u0131 yeterlidir; iyi yap\u0131land\u0131r\u0131lm\u0131\u015f tek rotorlu bir sistemle elde edilebilen ay\u0131rma keskinli\u011fi, bu hedefi tutarl\u0131 bir \u015fekilde tutturmak i\u00e7in yeterlidir.<\/p>\n\n\n\n

\u0130nce Taneler \u0130\u00e7in \u00c7ok A\u015famal\u0131 S\u0131n\u0131fland\u0131rma<\/h3>\n\n\n\n

D97'nin 10-12 \u03bcm'nin alt\u0131nda olmas\u0131 gereken ince aral\u0131kl\u0131 ve WLP kalitelerinde, tek bir s\u0131n\u0131fland\u0131r\u0131c\u0131 a\u015famas\u0131 yeterli ay\u0131rma keskinli\u011fi sa\u011flamaz. \u0130nce olarak s\u0131n\u0131fland\u0131r\u0131lan par\u00e7ac\u0131klar ile kaba olarak reddedilen par\u00e7ac\u0131klar aras\u0131ndaki ge\u00e7i\u015f b\u00f6lgesi \u00e7ok geni\u015ftir; hedef D97'nin \u00fczerindeki baz\u0131 par\u00e7ac\u0131klar \u00fcr\u00fcne kar\u0131\u015f\u0131r. \u0130ki a\u015famal\u0131 bir s\u0131n\u0131fland\u0131rma devresi bu sorunu \u00e7\u00f6zer: birinci s\u0131n\u0131fland\u0131r\u0131c\u0131 D50'yi belirler; ikincisi, \u00f6zellikle kaba kuyru\u011fu hedefleyerek ve Dmax'\u0131n spesifikasyon s\u0131n\u0131r\u0131n\u0131n alt\u0131nda kalmas\u0131n\u0131 sa\u011flayarak keskin bir \u00fcst kesim s\u0131n\u0131fland\u0131r\u0131c\u0131s\u0131 olarak \u00e7al\u0131\u015f\u0131r. \u0130ki a\u015famal\u0131 yakla\u015f\u0131m, ekipman maliyetini art\u0131r\u0131r ve kurulu s\u0131n\u0131fland\u0131r\u0131c\u0131 kapasitesi birimi ba\u015f\u0131na verimi d\u00fc\u015f\u00fcr\u00fcr, ancak elektronik s\u0131n\u0131f\u0131 tedarik zincirlerinin gerektirdi\u011fi tutarl\u0131l\u0131kla D97'yi 10 \u03bcm'nin alt\u0131nda tutman\u0131n tek g\u00fcvenilir yoludur.<\/p>\n\n\n\n

Yatay s\u0131n\u0131fland\u0131r\u0131c\u0131 geometrisi, ince taneli malzemeler i\u00e7in \u00f6zel bir avantaja sahiptir. Dikey eksenli bir s\u0131n\u0131fland\u0131r\u0131c\u0131da, daha b\u00fcy\u00fck par\u00e7ac\u0131klar\u0131n yer\u00e7ekimiyle \u00e7\u00f6kelmesi, merkezka\u00e7 kuvvetini k\u0131smen dengeler; 5 \u03bcm'nin alt\u0131ndaki kesim noktalar\u0131nda bu, kaba taraftaki da\u011f\u0131l\u0131m\u0131 geni\u015fleten asimetrik bir ayr\u0131m yarat\u0131r. Yatay eksenli s\u0131n\u0131fland\u0131r\u0131c\u0131lar, s\u0131n\u0131fland\u0131rma b\u00f6lgesini yer\u00e7ekimine dik olarak y\u00f6nlendirerek bu etkiyi ortadan kald\u0131r\u0131r ve ince par\u00e7ac\u0131k boyutlar\u0131nda daha keskin kesimler \u00fcretir.<\/p>\n\n\n\n

Hat \u0130\u00e7i PSD \u0130zleme<\/h3>\n\n\n\n

Elektronik s\u0131n\u0131f\u0131 \u00fcretimde, parti sonu \u00f6rneklemesi yetersiz bir kalite kontrol\u00fcd\u00fcr. D97 de\u011ferinin spesifikasyon dahilinde ba\u015flad\u0131\u011f\u0131 ancak son 90 dakikada spesifikasyonun \u00fczerine \u00e7\u0131kt\u0131\u011f\u0131 4 saatlik bir \u00fcretim s\u00fcreci, kar\u0131\u015f\u0131k bir parti \u00fcretir; bu partinin bir k\u0131sm\u0131 spesifikasyona uygundur, bir k\u0131sm\u0131 ise de\u011fildir. Bunlar\u0131 sonradan ay\u0131rmak pratik de\u011fildir. S\u0131n\u0131fland\u0131r\u0131c\u0131 \u00fcr\u00fcn \u00e7\u0131k\u0131\u015f\u0131nda, her 30-60 saniyede bir D10, D50, D90, D97 de\u011ferlerini kaydeden hat i\u00e7i bir lazer k\u0131r\u0131n\u0131m sens\u00f6r\u00fc standart \u00e7\u00f6z\u00fcmd\u00fcr. S\u0131n\u0131fland\u0131r\u0131c\u0131 tekerlek h\u0131z\u0131, bir geri besleme kontrol\u00f6r\u00fc arac\u0131l\u0131\u011f\u0131yla D97 okumas\u0131na ba\u011fl\u0131d\u0131r: D97 yukar\u0131 do\u011fru e\u011filim g\u00f6sterdi\u011finde, kesimi s\u0131k\u0131la\u015ft\u0131rmak i\u00e7in tekerlek h\u0131z\u0131 artar. Bu, \u00fcr\u00fcn\u00fcn sonradan kontrol edilmesi yerine s\u00fcrekli olarak spesifikasyon dahilinde kalmas\u0131n\u0131 sa\u011flar.<\/p>\n\n\n\n

Elektronik S\u0131n\u0131f\u0131 Erimi\u015f Silika i\u00e7in Minimum Analiz Sertifikas\u0131 Parametreleri<\/strong>
PSD parametreleri: <\/strong>D10, D50, D90, D97 ve Dmax \u2014 be\u015finin de gerekli oldu\u011fu belirtilmelidir. Yaln\u0131zca D50, EMC yeterlili\u011fi i\u00e7in yeterli de\u011fildir.
Kimya: <\/strong>SiO2 safl\u0131\u011f\u0131 (XRF), Fe2O3, Al2O3, Na2O, K2O, TiO2 (ICP-MS) \u2014 her biri sertifikal\u0131 maksimum de\u011ferlere sahip.
Amorf i\u00e7erik: <\/strong>Kantitatif XRD (Rietveld y\u00f6ntemi) \u2014 amorf y\u00fczdesi olarak onaylanm\u0131\u015ft\u0131r.
\u00d6zg\u00fcl y\u00fczey alan\u0131: <\/strong>BET \u00f6l\u00e7\u00fcm\u00fc \u2014 EMC form\u00fclasyonunda ba\u011flay\u0131c\u0131 ihtiyac\u0131 ve viskozite tahmini i\u00e7in \u00f6nemlidir.
Radyoaktivite: <\/strong>Alfa say\u0131m\u0131 veya ICP-MS ile U ve Th \u00f6l\u00e7\u00fcm\u00fc \u2014 mant\u0131k devreleri ve bellek paketleme tedarik zincirleri i\u00e7in gereklidir.
Morfoloji: <\/strong>SEM ile do\u011frulanan k\u00fcresel veya a\u00e7\u0131l\u0131 yap\u0131 \u2014 y\u00fck ta\u015f\u0131ma kapasitesi spesifikasyonu i\u00e7in \u00f6nemlidir.<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

A\u015fama 6 \u2014 Y\u00fczey \u0130\u015flemi<\/h2>\n\n\n\n

Her elektronik s\u0131n\u0131f\u0131 kayna\u015fm\u0131\u015f silika uygulamas\u0131 y\u00fczey i\u015flemine ihtiya\u00e7 duymaz, ancak y\u00fcksek dolgu maddeli EMC form\u00fclasyonlar\u0131 genellikle gerektirir. Sorun y\u00fczey kimyas\u0131ndad\u0131r. Do\u011fal kayna\u015fm\u0131\u015f silika, su ile hidrojen ba\u011flar\u0131 olu\u015fturan silanol (Si\u2013OH) gruplar\u0131yla kapl\u0131 hidrofilik bir y\u00fczeye sahiptir. Epoksi re\u00e7ine matrisleri hidrofobiktir. D\u00fc\u015f\u00fck dolgu maddesi y\u00fcklemesinde, re\u00e7ine bu uyumsuzlu\u011fa ra\u011fmen dolgu maddesi y\u00fczeyini yeterince \u0131slatabilir. A\u011f\u0131rl\u0131k\u00e7a -85% dolgu maddesi y\u00fcklemesinde, yetersiz y\u00fczey \u0131slatmas\u0131n\u0131n viskozite \u00fczerindeki etkisi, transfer kal\u0131plamay\u0131 engelleyecek kadar \u015fiddetlidir.<\/p>\n\n\n\n

Silan Ba\u011flay\u0131c\u0131 Maddeler<\/h3>\n\n\n\n

Silan ba\u011flay\u0131c\u0131 ajanlar, y\u00fczeydeki silanol gruplar\u0131yla reaksiyona girerek ve bunlar\u0131 epoksi re\u00e7ine kimyas\u0131yla uyumlu organofonksiyonel gruplarla de\u011fi\u015ftirerek bu sorunu \u00e7\u00f6zer. Reaksiyon, silan molek\u00fcl\u00fcn\u00fc bir Si\u2013O\u2013Si ba\u011f\u0131 yoluyla silika y\u00fczeyine ba\u011flar; organofonksiyonel u\u00e7 grup (re\u00e7ine sistemine ba\u011fl\u0131 olarak epoksi, amino veya metakrilat) daha sonra k\u00fcrleme s\u0131ras\u0131nda matris re\u00e7inesiyle birlikte reaksiyona girer.<\/p>\n\n\n\n

Epoksi-fonksiyonel silan (glisidoksipropiltrimetoksisilan), standart bisfenol-A epoksi EMC sistemleri i\u00e7in en yayg\u0131n ba\u011flay\u0131c\u0131 ajand\u0131r. \u00dcreticiler, re\u00e7ine kimyas\u0131 amin ko-reaktiflerini tercih etti\u011finde aminosilan kullan\u0131rlar. Termogravimetrik analiz (TGA), organik kaplama katman\u0131ndan k\u00fctle kayb\u0131n\u0131 \u00f6l\u00e7erek i\u015flem kapsam\u0131n\u0131 do\u011frular. Temas a\u00e7\u0131s\u0131 \u00f6l\u00e7\u00fcm\u00fc, hidrofilik-hidrofobik d\u00f6n\u00fc\u015f\u00fcm\u00fc do\u011frular.<\/p>\n\n\n\n

\u00dcreticiler, D50 5 \u03bcm'nin alt\u0131ndaki ince taneli erimi\u015f silika i\u00e7in kuru i\u015flemi (ak\u0131\u015fkan yatakl\u0131 veya darbeli reakt\u00f6rde gaz fazl\u0131 silan) tercih ederler. \u0130nce par\u00e7ac\u0131k boyutlar\u0131nda \u0131slak i\u015flem, k\u00fcmelenmeye neden olur; s\u0131v\u0131 kaplama maddesi, tamamen da\u011f\u0131lmadan \u00f6nce biti\u015fik par\u00e7ac\u0131klar aras\u0131nda k\u00f6pr\u00fc olu\u015fturur. K\u00fcmelenmi\u015f \u00fcr\u00fcn\u00fcn yeniden s\u0131n\u0131fland\u0131r\u0131lmas\u0131 gerekir, bu da maliyeti art\u0131r\u0131r ve verimi d\u00fc\u015f\u00fcr\u00fcr.<\/p>\n\n\n\n

7. A\u015fama \u2014 T\u00fcm Tedarik Zincirinde Kirlilik Kontrol\u00fc<\/h2>\n\n\n\n

Son \u00fcr\u00fcn\u00fcn kalitesi, her a\u015famada uygulanan kontaminasyon kontrol \u00f6nlemlerinin k\u00fcm\u00fclatif etkinli\u011fini yans\u0131t\u0131r. A\u015fa\u011f\u0131daki uygulamalar\u0131n her biri, elektronik s\u0131n\u0131f\u0131 erimi\u015f silika \u00fcretiminde parti hatalar\u0131na neden olan belirli bir kontaminasyon yolunu ele almaktad\u0131r.<\/p>\n\n\n\n

Manyetik Ay\u0131rma<\/h3>\n\n\n\n

Her boyut k\u00fc\u00e7\u00fcltme a\u015famas\u0131ndan sonra y\u00fcksek gradyanl\u0131 manyetik ay\u0131r\u0131c\u0131lar (10.000-15.000 Gauss) yerle\u015ftirilir. Manyetik ay\u0131r\u0131c\u0131lar, bir sonraki a\u015famaya ula\u015fmadan \u00f6nce yukar\u0131 ak\u0131\u015f ekipman\u0131ndan ferromanyetik a\u015f\u0131nma par\u00e7ac\u0131klar\u0131n\u0131 uzakla\u015ft\u0131r\u0131r. Bu par\u00e7ac\u0131klar aras\u0131nda \u00e7ene plakas\u0131 par\u00e7alar\u0131, de\u011firmen bilyesi tala\u015flar\u0131 ve astar k\u0131r\u0131klar\u0131 bulunur. \u0130nce boyutlardaki manyetik par\u00e7ac\u0131klar tehlikelidir; s\u0131n\u0131fland\u0131r\u0131c\u0131lardan ge\u00e7erler ve homojen olarak da\u011f\u0131l\u0131rlar. D50 5 \u03bcm silika i\u00e7indeki 2 \u03bcm'lik bir demir par\u00e7ac\u0131\u011f\u0131 lazer k\u0131r\u0131n\u0131m\u0131yla tespit edilemez. Son testlerde HGMS taraf\u0131ndan yakalan\u0131r veya ICP-MS ile tespit edilir.<\/p>\n\n\n\n

Temiz Oda S\u0131n\u0131f\u0131 Ambalajlama<\/h3>\n\n\n\n

\u00dcr\u00fcn son s\u0131n\u0131fland\u0131rmay\u0131 ge\u00e7tikten sonra, herhangi bir yeniden kirlenme \u00f6nlenmelidir. HEPA filtrelemeli pozitif bas\u0131n\u00e7l\u0131 temiz bir alanda paketleme, atmosferik partik\u00fcllerin a\u00e7\u0131k \u00fcr\u00fcn kaplar\u0131na girmesini \u00f6nler. \u00dcr\u00fcnle temas eden t\u00fcm ambalaj malzemeleri, eser metal katk\u0131s\u0131 a\u00e7\u0131s\u0131ndan onaylanm\u0131\u015f olmal\u0131d\u0131r; baz\u0131 polietilen torba t\u00fcrleri, ultra y\u00fcksek safl\u0131kta kayna\u015fm\u0131\u015f silikaya s\u0131zabilen metal bazl\u0131 \u0131s\u0131 stabilizat\u00f6rleri i\u00e7erir.<\/p>\n\n\n\n

Son Kalite Kontrol Bataryas\u0131<\/h3>\n\n\n\n
Test<\/strong><\/td>Enstr\u00fcman<\/strong><\/td>Do\u011frulad\u0131\u011f\u0131 \u015eey<\/strong><\/td><\/tr>
Par\u00e7ac\u0131k boyutu da\u011f\u0131l\u0131m\u0131<\/td>Lazer k\u0131r\u0131n\u0131m\u0131 (s\u0131ra i\u00e7i + son parti)<\/td>D10, D50, D90, D97, Dmax \u2014 be\u015finin de belirtilen \u00f6zelliklere uygun olmas\u0131 gerekir.<\/td><\/tr>
Kimyasal safl\u0131k<\/td>XRF (ana elementler)<\/td>SiO2 i\u00e7eri\u011fi ve ba\u015fl\u0131ca safs\u0131zl\u0131k oksitleri<\/td><\/tr>
\u0130z elementler<\/td>ICP-MS<\/td>Fe, Al, Na, K, Ti ve di\u011fer belirtilen elementler ppm'den alt ppm seviyesine kadar mevcuttur.<\/td><\/tr>
Amorf i\u00e7erik<\/td>XRD (Rietveld y\u00f6ntemi)<\/td>Kristal kuvars i\u00e7eri\u011fi \u2014 belirtilen s\u0131n\u0131r\u0131n alt\u0131nda olmal\u0131d\u0131r.<\/td><\/tr>
\u00d6zg\u00fcl y\u00fczey alan\u0131<\/td>BET (azot adsorpsiyonu)<\/td>Y\u00fczey alan\u0131 (m2\/g) \u2014 ba\u011flay\u0131c\u0131 ihtiyac\u0131 ve silan kaplamas\u0131 a\u00e7\u0131s\u0131ndan \u00f6nemlidir.<\/td><\/tr>
Radyoaktivite<\/td>U\/Th i\u00e7in alfa par\u00e7ac\u0131k say\u0131m\u0131 veya ICP-MS<\/td>U ve Th \u2014 geli\u015fmi\u015f mant\u0131k ve bellek paketleme i\u00e7in gereklidir.<\/td><\/tr>
Y\u00fczey i\u015flemi do\u011frulamas\u0131<\/td>TGA + temas a\u00e7\u0131s\u0131<\/td>Silan kaplama homojenli\u011fi ve hidrofobik d\u00f6n\u00fc\u015f\u00fcm\u00fcn do\u011frulanmas\u0131<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n
Elektronik s\u0131n\u0131f\u0131 erimi\u015f silika i\u00e7in \u00f6\u011f\u00fctme veya s\u0131n\u0131fland\u0131rma ekipman\u0131na m\u0131 ihtiyac\u0131n\u0131z var?<\/strong>
EPIC Powder Machinery, elektronik s\u0131n\u0131f\u0131 erimi\u015f silika \u00fcretimi i\u00e7in \u00f6zel olarak yap\u0131land\u0131r\u0131lm\u0131\u015f jet de\u011firmenleri, seramik astarl\u0131 bilyal\u0131 de\u011firmenler ve \u00e7ok kademeli hava s\u0131n\u0131fland\u0131r\u0131c\u0131lar\u0131 tedarik etmektedir. T\u00fcm \u00fcr\u00fcnle temas eden y\u00fczeyler al\u00fcmina veya zirkonya seramikten \u00fcretilmektedir. Ekipman taahh\u00fcd\u00fcnden \u00f6nce, hammaddeniz \u00fczerinde \u00fccretsiz s\u0131n\u0131fland\u0131rma denemeleri sunuyoruz. Bize hammaddenizin par\u00e7ac\u0131k boyutu da\u011f\u0131l\u0131m\u0131n\u0131 (PSD) ve hedef D50, D97 ve Dmax \u00f6zelliklerinizi g\u00f6nderin, biz de elde edilebilecekleri teyit edip bir deneme \u00f6\u011f\u00fctme i\u015flemi ger\u00e7ekle\u015ftirelim.\u00a0\u00a0<\/strong>
\u00dccretsiz S\u0131n\u0131fland\u0131rma Deneme Talebinde Bulunun: www.quartz-grinding.com\/contact\u00a0\u00a0<\/strong>
Erimi\u015f Silika \u0130\u015fleme Ekipmanlar\u0131m\u0131z\u0131 Ke\u015ffedin: www.quartz-grinding.com<\/strong><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

S\u0131k\u00e7a Sorulan Sorular<\/h2>\n\n\n\n

Erimi\u015f silika ile dumanl\u0131 silika aras\u0131ndaki fark nedir? EMC dolgu maddesi olarak birbirlerinin yerine kullan\u0131labilirler mi?<\/h3>\n\n\n\n

Tamamen farkl\u0131 i\u015flemler, bu malzemeleri tamamen farkl\u0131 par\u00e7ac\u0131k boyutu \u00f6l\u00e7eklerinde \u00fcretir. \u00dcreticiler, erimi\u015f silikay\u0131 1.720\u00b0C'nin \u00fczerinde eritir, ard\u0131ndan EMC dolgu maddesi i\u00e7in D50 1-15 \u03bcm'ye kadar \u00f6\u011f\u00fct\u00fcr. Erimi\u015f silika, a\u011f\u0131rl\u0131k\u00e7a 70-85%'de y\u00fcksek y\u00fckleme yoluyla kompozit CTE'yi yap\u0131sal olarak azalt\u0131r.<\/p>\n\n\n\n

Alevle yanma, 50-400 m\u00b2\/g y\u00fczey alan\u0131na sahip 10-20 nm partik\u00fcller \u00fcreten dumanl\u0131 silika \u00fcretir. Rol\u00fc reolojiktir; 0,1-1% ilave seviyelerinde ak\u0131\u015f\u0131 ve tiksotropiyi kontrol eder. Yap\u0131sal dolgu maddesi olarak dumanl\u0131 silika, y\u00fczey alan\u0131n\u0131 \u0131slatmak i\u00e7in a\u015f\u0131r\u0131 miktarda ba\u011flay\u0131c\u0131 gerektirir. Reoloji de\u011fi\u015ftirici olarak erimi\u015f silika, birim k\u00fctle ba\u015f\u0131na d\u00fc\u015f\u00fck y\u00fczey alan\u0131 nedeniyle etkisizdir.<\/p>\n\n\n\n

D97 25 \u03bcm (standart EMC) telden D97 8 \u03bcm (ince aral\u0131kl\u0131) tele ge\u00e7menin \u00fcretim maliyetine etkisi nedir?<\/h3>\n\n\n\n

Spesifikasyon incelik kazand\u0131k\u00e7a \u00fc\u00e7 maliyet fakt\u00f6r\u00fc artar. D50 3 \u03bcm'ye kadar jet \u00f6\u011f\u00fctme, D50 8 \u03bcm'ye kadar \u00f6\u011f\u00fctmeye g\u00f6re s\u0131k\u0131\u015ft\u0131r\u0131lm\u0131\u015f gazda 3-4 kat daha pahal\u0131d\u0131r. 10 \u03bcm'nin alt\u0131nda D97 elde etmek, 40-60% daha d\u00fc\u015f\u00fck verimle \u00e7ok a\u015famal\u0131 s\u0131n\u0131fland\u0131rma gerektirir. \u0130nce kaliteler daha y\u00fcksek geri d\u00f6n\u00fc\u015f\u00fcm oranlar\u0131na sahiptir ve bu da spesifikasyona uygun \u00e7\u0131kt\u0131 ba\u015f\u0131na enerji maliyetini art\u0131r\u0131r. Ultra ince WLP s\u0131n\u0131f\u0131 (D50 1-3 \u03bcm), ayn\u0131 ham maddeden elde edilen standart EMC s\u0131n\u0131f\u0131na g\u00f6re 3-5 kat daha pahal\u0131d\u0131r.<\/p>\n\n\n\n

EPIC Powder Machinery'nin ekipmanlar\u0131, elektronik s\u0131n\u0131f\u0131 erimi\u015f silika i\u00e7in t\u00fcm \u00fcretim zincirini y\u00f6netebilir mi?<\/h3>\n\n\n\n

EPIC Toz Makinalar\u0131<\/a> \u00dcretim zincirinin 4. ve 5. a\u015famalar\u0131 olan ince \u00f6\u011f\u00fctme ve s\u0131n\u0131fland\u0131rma i\u00e7in ekipman tedarik ediyoruz. \u0130nce \u00f6\u011f\u00fctme i\u00e7in: ince ve ultra ince kaliteler (D50 5 \u03bcm'nin alt\u0131nda) i\u00e7in seramik temas y\u00fczeyli ak\u0131\u015fkan yatakl\u0131 jet de\u011firmenleri ve standart ve orta kaliteler (D50 5-15 \u03bcm) i\u00e7in hava s\u0131n\u0131fland\u0131r\u0131c\u0131l\u0131 kapal\u0131 devre seramik kapl\u0131 bilyal\u0131 de\u011firmenler. S\u0131n\u0131fland\u0131rma i\u00e7in: standart EMC kaliteleri (D97 25 \u03bcm'nin alt\u0131nda) i\u00e7in tek kademeli dinamik hava s\u0131n\u0131fland\u0131r\u0131c\u0131lar\u0131 ve ince ad\u0131ml\u0131 ve WLP kaliteleri (D97 10-12 \u03bcm'nin alt\u0131nda) i\u00e7in yatay s\u0131n\u0131fland\u0131r\u0131c\u0131 geometrisine sahip \u00e7ok kademeli s\u0131n\u0131fland\u0131rma sistemleri. T\u00fcm sistemler, s\u0131n\u0131fland\u0131r\u0131c\u0131 kontrol sistemiyle entegre edilmi\u015f hat i\u00e7i lazer k\u0131r\u0131n\u0131m\u0131 izleme \u00f6zelli\u011fiyle birlikte sunulmaktad\u0131r. Test tesisimizde, m\u00fc\u015fterinin sa\u011flad\u0131\u011f\u0131 erimi\u015f silika beslemesi \u00fczerinde \u00fccretsiz s\u0131n\u0131fland\u0131rma denemeleri sunuyoruz ve herhangi bir ekipman taahh\u00fcd\u00fcnden \u00f6nce tam PSD, y\u00fczey alan\u0131 ve kirlilik verileri elde ediyoruz.<\/p>\n\n\n\n

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